Evaluation of Strain in 3C-SiC/Si Epiwafers from X-Ray Diffraction Measurements

EVALUATION OFDISLOCATION STRUCTURE AND CRYSTALLITE SIZE IN WORN AL-SI ALLOY BY X-RAY DIFFRACTION

Abstract: powerful method for the characterization of microstructures of crystalline materials in terms of crystallite size anddislocation structures. In this paper the effect of the sliding on the microstructure of A356 in the as-cast and heattreated conditions are studied, The X-ray phase analysis shows that with increasing applied load, the dislocationdensity is increased, whereas the crysta...

THERMAL STRAIN MEASUREMENTS IN EPITAXIAL CoSi2/Si BY DOUBLE CRYSTAL X-RAY DIFFRACTION

The perpendicular x-ray strain of epitaxial CoSi2 films grown on Si(lll) substrates at ""' 600°C by MBE was measured at various temperatures. Within experimental error margins, the strain decreases linearly with rising temperature at a rate of (1.3±0.1) x lo-s ;oc from room temperature up to 600°C. Over that temperature range and the duration of a complete measurement (""' .5h to ""' 2h), these...

X-ray diffraction from microtubules.

X-ray diffraction patterns from sperm-tail microtubules indicate that subunits with a 40 to 50 A packing diameter form filaments, alternately half-staggered, parallel to the tubule axis. A 12-or a 13-stranded structure fits best with the X-ray diagram. The strongest bonding is that between units within a longitudinal filament; the weaker lateral interactions are disrupted by drying. Microtubule...

Nanoscale Strain Characterization in Microelectronic Materials Using X-ray Diffraction

The engineering of strained semiconductor materials represents an important aspect of the enhancement in CMOS device performance required for current and future generations of microelectronic technology. An understanding of the mechanical response of the Si channel regions and their environment is key to the prediction and design of device operation. Because of the complexity of the composite g...

Thermomechanical strain measurements by synchrotron x-ray diffraction and data interpretation for through-silicon vias